Optoelectronic device

ABSTRACT

An optoelectronic device comprises a substrate; a groove on the substrate; a plurality of semiconductor units on the substrate and separated by the groove, wherein each semiconductor unit comprises a first semiconductor layer, a second semiconductor layer, and an active region interposed between the first semiconductor layer and the second semiconductor layer; a connecting part crossing the groove for connecting two of the plurality of semiconductor units, wherein the connecting part comprises one end on the first semiconductor layer and another end on the second semiconductor layer; a first electrode comprising a plurality of first extensions jointly connected to the one end of the connecting part; and a second electrode comprising a plurality of second extensions jointly connected to the another end of the connecting part, wherein an amount of the plurality of first extensions is different from an amount of the plurality of second extensions.

REFERENCE TO RELATED APPLICATION

This application is a continuation application of U.S. patentapplication Ser. No. 15/952,197, filed on Apr. 12, 2018, now pending,which is a continuation application of U.S. patent application Ser. No.15/097,468, filed on Apr. 13, 2016, now U.S. Pat. No. 9,985,184, whichis a continuation application of U.S. patent application Ser. No.12/830,059, filed on Jul. 2, 2010, now U.S. Pat. No. 9,324,691, whichclaims the right of priority based on TW application Serial No.098305006, filed on Oct. 20, 2009 and the right of priority based on TWapplication Serial No. 099300687, filed on Feb. 10, 2010, and thecontents of which are hereby incorporated by references in theirentireties.

BACKGROUND Technical Field

The present invention relates to a light-emitting element array.

Description of the Related Art

The light-emitting diodes (LEDs) of the solid-state lighting elementshave the characteristics of low power consumption, low heat generation,long operation life, crashproof, small volume, quick response and goodopto-electrical property like light emission with a stable wavelength,so the LEDs have been widely used in household appliances, indicatorlight of instruments, and opto-electrical products, etc. As theopto-electrical technology develops, the solid-state lighting elementshave great progress in the light efficiency, operation life and thebrightness, and LEDs are expected to become the main stream of thelighting devices in the near future.

Now, the LEDs are used in an array type light-emitting element, whichcan be applied to more applications with high driving voltage, anddecrease the volume and weight of LED. The manufacturers design variouskinds of electrode layout of the array type light-emitting element tosatisfy customers' requirements of LEDs with high driving voltage, andto increase the production efficiency with lower cost.

SUMMARY OF THE DISCLOSURE

An optoelectronic device comprises a substrate; a plurality ofsemiconductor units electrically connected with each other and disposedjointly on the substrate, wherein each semiconductor unit comprises afirst semiconductor layer, a second semiconductor layer, and an activeregion interposed between thereof; a plurality of first electrodesdisposed on each first semiconductor layer respectively; a connectingpart formed on the semiconductor units to electrically connect thesemiconductor units in series; and a plurality of second electrodesdisposed on each second semiconductor layer respectively, wherein atleast one of the first electrodes comprises a first extension, and atleast one of the second electrodes comprises a second extension.

An optoelectronic device comprises a substrate; a plurality ofsemiconductor units electrically connected with each other and disposedjointly on the substrate, wherein each semiconductor unit comprises afirst semiconductor layer, a second semiconductor layer, and an activeregion interposed between thereof; a plurality of first electrodesdisposed on each first semiconductor layer respectively; and a pluralityof second electrodes disposed on each second semiconductor layerrespectively, wherein at least one of the first electrodes comprises afirst extension, and at least one of the second electrodes comprises asecond extension, wherein at least one of the first extension and thesecond extension comprises a curve which is not parallel to the edge ofthe semiconductor units.

An optoelectronic device comprises a substrate; a plurality ofsemiconductor units electrically connected with each other and disposedjointly on the substrate, wherein each semiconductor unit comprises afirst semiconductor layer, a second semiconductor layer, and an activeregion interposed between thereof; a plurality of first electrodesdisposed on each first semiconductor layer respectively; and a pluralityof second electrodes disposed on each second semiconductor layerrespectively; wherein at least one of the first electrodes comprises afirst extension, and at least one of the second electrodes comprises asecond extension, wherein the areas of each of the semiconductor unitsare substantially the same, and/or the semiconductor units comprise atleast two different shapes.

An optoelectronic device comprising: a substrate; a plurality ofsemiconductor units electrically connected with each other and disposedjointly on the substrate, wherein each semiconductor unit comprises afirst semiconductor layer, a second semiconductor layer, and an activeregion interposed between thereof; a plurality of first electrodesdisposed on each first semiconductor layer respectively; and a pluralityof second electrodes disposed on each second semiconductor layerrespectively, wherein the plurality of semiconductor units comprises afirst semiconductor unit, a second semiconductor unit and a thirdsemiconductor unit, at least one of the first electrodes comprises afirst pad disposed on the first semiconductor unit on the most outsideof the substrate, and at least one of the second electrodes comprises asecond pad disposed on the second semiconductor units on the mostoutside of the substrate; wherein the first electrode and the secondelectrode comprises a first extension and a second extension disposed onthe third semiconductor unit without any pad.

An optoelectronic device comprises a substrate; a plurality ofsemiconductor units electrically connected with each other and disposedjointly on the substrate; wherein each semiconductor unit comprises afirst semiconductor layer, a second semiconductor layer, and an activelayer interposed between thereof; a plurality of first electrodesdisposed on each first semiconductor layer respectively; and a pluralityof second electrodes disposed on each second semiconductor layerrespectively; wherein the plurality of semiconductor units comprises afirst semiconductor unit and a second semiconductor unit, at least oneof the first electrodes comprises a first curve extension disposed onthe first edge of the first semiconductor unit, and at least one of thesecond electrode comprises a second curve extension disposed on thesecond edge of the second semiconductor unit, wherein the first edge andthe second edge are adjacent to each other, and the first curveextension and the second curve extension are electrically connected by aconductive part.

An optoelectronic device comprises a substrate; a groove on thesubstrate; a plurality of semiconductor units on the substrate andseparated by the groove, wherein each semiconductor unit comprises afirst semiconductor layer, a second semiconductor layer, and an activeregion interposed between the first semiconductor layer and the secondsemiconductor layer; a connecting part crossing the groove forconnecting two of the plurality of semiconductor units, wherein theconnecting part comprises one end on the first semiconductor layer andanother end on the second semiconductor layer; a first electrodecomprising a plurality of first extensions jointly connected to the oneend of the connecting part; and a second electrode comprising aplurality of second extensions jointly connected to the another end ofthe connecting part, wherein an amount of the plurality of firstextensions is different from an amount of the plurality of secondextensions.

An optoelectronic device comprises a substrate; a plurality ofsemiconductor units comprising a first group of semiconductor unitsarranged in a first column and a second group of semiconductor unitsarranged in a second column, wherein each of the plurality ofsemiconductor units comprises a first semiconductor layer, a secondsemiconductor layer, and an active region interposed between the firstsemiconductor layer and the second semiconductor layer, an amount of thefirst group of semiconductor units is different from an amount of thesecond group of semiconductor units, the first group of semiconductorunits comprises a rectangular shape different from that of the secondgroup of semiconductor units; a first electrode disposed on the firstsemiconductor layer, the first electrode comprising a first extension;and a second electrode disposed on the second semiconductor layer, thesecond electrode comprising a second extension.

An optoelectronic device comprises a substrate; a plurality ofsemiconductor units arranged in multiple columns, wherein the multiplecolumns comprise a first column, a second column, and a third column,the plurality of semiconductor units comprises a first semiconductorunit arranged in the first column, a second semiconductor unit arrangedin the second column, and a third semiconductor unit in the thirdcolumn, wherein each of the plurality of semiconductor units comprises afirst semiconductor layer, a second semiconductor layer, and an activeregion interposed between the first semiconductor layer and the secondsemiconductor layer; a first electrode disposed on the firstsemiconductor layer; and a second electrode disposed on the secondsemiconductor layer, wherein an electrode layout of the firstsemiconductor unit, the second semiconductor unit and the thirdsemiconductor unit are different from each other.

An optoelectronic device comprises a substrate; a groove on thesubstrate; a plurality of semiconductor units on the substrate andseparated from each other by the groove, wherein the plurality ofsemiconductor units are arranged in a first column and a second column,the plurality of semiconductor units comprises a first semiconductorunit arranged in the first column and a second semiconductor unitarranged in the second column, each semiconductor unit comprises a firstsemiconductor layer, a second semiconductor layer, and an active regioninterposed between the first semiconductor layer and the secondsemiconductor layer; a first connecting part comprising a first portionon the first semiconductor layer of the second semiconductor unit and asecond portion on the second semiconductor layer of the firstsemiconductor unit; a first electrode formed on the first semiconductorlayer of the second semiconductor unit and extended from a first cornerof the first connecting part; and a second electrode formed on thesecond semiconductor layer of the first semiconductor unit and extendedfrom a second corner of the first connecting part, wherein the firstcorner and the second corner are disposed on a diagonal line of thefirst connecting part.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide easy understanding ofthe application, and are incorporated herein and constitute a part ofthis specification. The drawings illustrate embodiments of theapplication and, together with the description, serve to illustrate theprinciples of the application.

FIG. 1 illustrates a top view of the optoelectronic device in accordancewith one embodiment of the present application.

FIG. 2 illustrates a cross-sectional view of the optoelectronic deviceshown in FIG. 1.

FIG. 3 illustrates a three-dimensional view of the optoelectronic deviceshown in FIG. 1.

FIG. 4 illustrates an equivalent circuit diagram of the optoelectronicdevice shown in FIG. 1.

FIG. 5 illustrates a top view of the optoelectronic device in accordancewith one embodiment of the present application.

FIG. 6 illustrates a three-dimensional view of the optoelectronic deviceshown in FIG. 5.

FIG. 7 illustrates an equivalent circuit diagram of the optoelectronicdevice shown in FIG. 5.

FIG. 8 illustrates a top view of the optoelectronic device in accordancewith one embodiment of the present application.

FIG. 9 illustrates a three-dimensional view of the optoelectronic deviceshown in FIG. 8.

FIG. 10 illustrates an equivalent circuit diagram of the optoelectronicdevice shown in FIG. 8.

FIG. 11 illustrates a top view of the optoelectronic device inaccordance with one embodiment of the present application.

FIG. 12 illustrates a three-dimensional view of the optoelectronicdevice shown in FIG. 11.

FIG. 13 illustrates an equivalent circuit diagram of the optoelectronicdevice shown in FIG. 11.

FIG. 14 illustrates a top view of the optoelectronic device inaccordance with one embodiment of the present application.

FIG. 15 illustrates a three-dimensional view of the optoelectronicdevice shown in FIG. 14.

FIG. 16 illustrates an equivalent circuit diagram of the optoelectronicdevice shown in FIG. 14.

FIG. 17 illustrates a top view of the optoelectronic device inaccordance with one embodiment of the present application.

FIG. 18 illustrates a three-dimensional view of the optoelectronicdevice shown in FIG. 17.

FIG. 19 illustrates an equivalent circuit diagram of the optoelectronicdevice shown in FIG. 17.

FIG. 20 illustrates a top view of the optoelectronic device inaccordance with one embodiment of the present application.

FIG. 21 illustrates a three-dimensional view of the optoelectronicdevice shown in FIG. 20.

FIG. 22 illustrates an equivalent circuit diagram of the optoelectronicdevice shown in FIG. 20.

FIG. 23 illustrates a top view of the optoelectronic device inaccordance with one embodiment of the present application.

FIG. 24 illustrates a three-dimensional view of the optoelectronicdevice shown in FIG. 23.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Reference is made in detail to the preferred embodiments of the presentapplication, examples of which are illustrated in the accompanyingdrawings. Wherever possible, the same reference numbers are used in thedrawings and the description to refer to the same or like parts.

FIG. 1 illustrates a top view of an optoelectronic device 10 inaccordance with the first embodiment of the present application. Theoptoelectronic device 10, such as a light-emitting diode (LED), a laserdiode (LD), or a solar cell, includes a plurality of semiconductor unitsformed on a substrate 11, first electrodes 141, second electrodes 142,and connecting parts 143 formed on the semiconductor units. FIG. 2illustrates a cross-sectional view of the optoelectronic device 10 alonethe A-A′ line in FIG. 1. Each semiconductor unit includes a firstsemiconductor layer 121, a second semiconductor layer 123, and an activeregion 122 interposed between thereof. The material of the firstsemiconductor layer 121 is an III-V semiconductor material doped withp-type dopant or n-type dopant. The material of the second semiconductorlayer 123 is a III-V semiconductor material doped with p-type dopant orn-type dopant. The conductivities of the first semiconductor layer 121and that of the second semiconductor layer 123 are opposite. The activeregion includes a single heterostructure (SH), a double heterostructure(DH), or a multi-quantum well (MQW) structure. Trenches 170 are formedin the semiconductor units by etching the semiconductor units. A part ofthe first semiconductor layer 121 is exposed through the trench 170. Aplurality of separation grooves 111 are formed between the semiconductorunits and expose a part of the substrate 11. There are a plurality offirst electrodes 141 and second electrodes 142 on the optoelectronicdevice 10. The first electrodes 141 are formed on the exposed firstsemiconductor layer 121, and the second electrodes 142 are formed on thesecond semiconductor layer 123. The first electrode 141 formed on thesemiconductor unit includes first extensions 1411, and the secondelectrode 142 formed on the semiconductor unit includes a secondextensions 1421. The first electrode 141 formed on one of thesemiconductor units includes a first pad 1412, and the second electrode142 formed on another one of the semiconductor units includes a secondpad 1422.

In order to satisfy customers' request that the optoelectronic devicecan work under a required area, current and driving voltage, the layoutsof the semiconductor units and the electrodes have to be designed. Theequation of the number of semiconductor unit is

${n = ( {\frac{V}{V_{f}} - 1} )},( \frac{V}{V_{f}} ),{{or}\mspace{14mu} ( {\frac{V}{V_{f}} + 1} )},$

wherein n is the number of semiconductor unit, V is the driving voltageof the optoelectronic device, V_(f) is the driving voltage of thesemiconductor unit. In the embodiment, the size of the optoelectronicdevice 10 is 85×85 mil², and the driving voltage is 72 V. The drivingvoltage of each semiconductor unit is substantially 3 V. The drivingvoltage of the semiconductor unit can be changed through the manufactureprocess control and the quality of the epitaxy layers. Normally, thelower driving voltage of the semiconductor unit is better at theelectrical efficiency of the optoelectronic device. The area of eachsemiconductor unit is the same with each other. According to theequation, the optoelectronic device 10 includes twenty-foursemiconductor units arranged in five columns 105, 106, 107, 108, and109. The first column 105 includes five semiconductor units 151, 152,153, 154, and 155 connected in series in a first orientation. The secondcolumn 106 includes five semiconductor units 161, 162, 163, 164, and 165connected in series in a second orientation. The third column 107includes four semiconductor units 171, 172, 173, and 174 connected inseries in the first orientation. The fourth column 108 includes fivesemiconductor units 181, 182, 183, 184, and 185 connected in series inthe second orientation. The fifth column 109 includes five semiconductorunits 191, 192, 193, 194, and 195 connected in series in the firstorientation. The first and second orientations are opposite. It iseasily arranged with the layout that each column includes differentnumber of semiconductor units to satisfy customers' request.

The shape of the semiconductor units in the third column 107 isrectangular and is different from that of the semiconductor units in theother columns. With this design it is easier to arrange the electrodes.Referring to FIG. 1 and FIG. 3, the layouts of electrodes onsemiconductor units in first column 105 and fifth column 109 are similarexcept that of electrodes on semiconductor units 151, 155, 191 and 195on the corner region of the substrate 11. The layouts of electrodes onthe semiconductor units in second column 106 and fourth column 108 arethe same except that of electrodes on semiconductor units 161, 165, 181and 185 close to the edge of the substrate 11. The layout of theelectrode on the semiconductor units in the third column 107 is the mostdifferent from that of the electrode on the other semiconductor unitsdue to the shape of the semiconductor units. The layouts of theelectrodes on the semiconductor units 172 and 173 are the same butdifferent from the layouts of the electrodes on the semiconductor units171 and 174 close to the edge of the substrate 11.

The first extensions 1411 include a first curve extension 1411 a, andthe second extensions 1421 include a second curve extension 1421 a. Thesecond extensions 1421 further include a straight extension 1421 b onthe semiconductor units in columns 105, 106, 108, and 109. The firstcurve extensions 1411 a and/or the second curve extensions 1421 a arenot parallel to any edge of the semiconductor units. The firstextensions 1411 on the semiconductor units in first, third and fifthcolumns 105, 107, 109 are disposed on the surface of the trench 170 andextended from the first edge of the semiconductor units to the secondedge opposite to the first edge; and the second extension 1421 isextended from the second edge to the first edge. The first extensions1411 of the semiconductor units in the second and fourth columns 106,108 are extended from the second edge of the semiconductor units to thefirst edge, and the second extensions 1421 are extended from the firstedge to the second edge. In this embodiment, the second extensions 1421are disposed substantially around the edges of the semiconductor unitsand the first extensions 1411 are interposed between thereof. Thequantity of the extension can be adjusted based on the area of thesemiconductor unit. If the larger area the semiconductor unit is, themore extensions the semiconductor unit needs. A secondary extension 1411c and/or a secondary extension 1421 c extend from the first curveextension 1411 a and the second curve extension 1421 a can be formed toincrease the current spreading.

The first pad 1412 and the second pad 1422 are formed on thesemiconductor units 155 and 191 located in the opposite corner regionsof the substrate 11 respectively. The first pad 1412 is in contact withthe first extension 1411 on the semiconductor units 155. The second pad1422 is in contact with the second extension 1421 on the semiconductorunits 191. The pads are formed for wire bonding or flip chip typebonding. In order to decrease the difficulty of bonding, the pads arepreferred to be arranged on different semiconductor units on the mostoutside of the substrate 11 respectively.

In order to electrically connect the semiconductor units, a connectingpart 143 is formed between the semiconductor units. The connecting part143 is in contact with for example the first extension 1411 on the firstsemiconductor unit and the second extension 1421 on the secondsemiconductor unit adjacent to the first semiconductor unit. In theembodiment, the connecting parts 143 form a serial connection betweenthe semiconductor units in the first, third, and fifth columns 105, 107,109 in a first orientation, and a reverse serial connection between thesemiconductor units in the second, fourth columns 106, 109 in a secondorientation. The columns form a serial connection due to a connectionbetween the semiconductor units 151 and 161, 165 and 174, 171 and 181,and 185 and 195 by connecting parts 143. There are two connecting parts143 between each two semiconductor units in the first, second, fourth,and fifth columns 105, 106, 108, 109; one connecting part 143 betweeneach two semiconductor units in the third column 107. FIG. 4 is anequivalent circuit diagram of the optoelectronic device 10 shown in FIG.1.

The optoelectronic device 10 can further include a transparentconductive layer formed between the second semiconductor layer 123 andthe second electrode 142. The material of the transparent conductivelayer is a metal oxide material such as indium tin oxide (ITO), cadmiumtin oxide (CTO), antimony tin oxide, indium zinc oxide, zinc aluminumoxide, or zinc tin oxide. A metal layer with a thickness light can passalso can be the transparent conductive layer.

An adhesive layer can be further formed between the substrate 11 and thefirst semiconductor layer 121 for attaching the semiconductor units tothe substrate 11. The adhesive layer is an insulating transparentadhesive layer or a conductive adhesive layer. The insulatingtransparent adhesive layer can be polyimide (PI), benzocyclobutene(BCB), or perfluorocyclobutene (PFCB). The material of the conductivelayer is metal oxide material or metal. The metal oxide materialincludes indium tin oxide (ITO), cadmium tin oxide (CTO), antimony tinoxide, indium zinc oxide, zinc aluminum oxide, or zinc tin oxide. Themetal material includes Ni, Au, Ti, Cr, Al, or Pt. The separationgrooves 111 are formed between the semiconductor units, and a part ofthe substrate 11 and/or the insulating transparent adhesive layer isexposed by the separation groove 111. When the adhesive layer is theconductive adhesive layer, the separation grooves 111 have to passthrough the conductive adhesive layer and the substrate 11 which isexposed for electric insulation between semiconductor units and thesubstrate has to be an insulating material such as AlN, sapphire, orglass.

FIG. 5 illustrates a top view of an optoelectronic device 20 inaccordance with the second embodiment of the present application.Referring to FIGS. 5-6, the optoelectronic device 20 includes aplurality of semiconductor units formed on a substrate 21 and separatedby trenches, first electrodes 241, second electrodes 242, and connectingparts 243 formed on the semiconductor units. The structure of thesemiconductor units is the same as that in the optoelectronic device 10including the first semiconductor layer 121, the second semiconductorlayer 123, and the active region 122 interposed between thereof. Aplurality of separation grooves 211 are formed between the semiconductorunits. There are a plurality of first electrodes 241 and secondelectrodes 242 on the optoelectronic device 20. The first electrodes 241are formed on the exposed first semiconductor layer 121, and the secondelectrodes 242 are formed on the second semiconductor layer 123. Thefirst electrodes 241 include first extensions 2411, and the secondelectrodes 242 include second extensions 2421. The first electrode 241formed on one of the semiconductor units includes a first pad 2412, andthe second electrode 242 formed on another one of the semiconductorunits includes a second pad 2422.

In the embodiment, the size of the optoelectronic device 20 is 85×85mil², and the driving voltage is 72 V. The area of each semiconductorunit is the same with each other. According to the equation

$( {\frac{V}{V_{f}} - 1} ),$

the optoelectronic device 20 includes twenty-three semiconductor unitsarranged in five columns 205, 206, 207, 208, and 209. The first column205 includes five semiconductor units 251, 252, 253, 254, and 255connected in series in a first orientation, and the electrode layout isthe same as that of the semiconductor units in the first column 105 inoptoelectronic device 10. The second column 206 includes foursemiconductor units 261, 262, 263, and 264 connected in series in asecond orientation, and the electrode layout is the same as that of thesemiconductor units in the third column 107 in optoelectronic device 10.The third column 207 includes five semiconductor units 271, 272, 273,274, and 275 connected in series in the first orientation, and theelectrode layout is the same as that of the semiconductor units in thefirst column 105 in optoelectronic device 10. The fourth column 208includes four semiconductor units 281, 282, 283, and 284 connected inseries in the second orientation, and the electrode layout is the sameas that of the semiconductor units in the third column 107 inoptoelectronic device 10. The fifth column 209 includes fivesemiconductor units 291, 292, 293, 294, and 295 connected in series inthe first orientation, and the electrode layout is the same as that ofthe semiconductor units in the first column 105 in optoelectronic device10.

The shape of the semiconductor units in the second and fourth columns206 and 208 is rectangular and is different from that of thesemiconductor units in the other columns Referring to FIG. 5 and FIG. 6,the layouts of electrodes on semiconductor units in first column 205,third column 207, and fifth column 209 are similar to each other exceptthat of the electrodes on the semiconductor units 251, 255, 271, 275,291 and 295. The layouts of electrodes on the semiconductor units insecond column 206 and fourth column 208 are the same except that ofelectrodes on the semiconductor units 261, 264, 281, and 284. The firstextensions 2411 include a first curve extension 2411 a, and the secondextensions 2421 include a second curve extension 2421 a. The secondextensions 2421 further include a straight extension 2421 b on thesemiconductor units in columns 205, 207, and 209. The first curveextensions 2411 a and the second curve extension 2421 a are not parallelto any edges of the semiconductor units. The first extensions 2411 onthe semiconductor units in first, third and fifth columns 205, 207, 209are disposed on the first semiconductor layer 121 and extended from thefirst edge of the semiconductor units to the second edge opposite to thefirst edge, and the second extension 2421 is extended from the secondedge to the first edge. The first extensions 2411 on the semiconductorunits in second and fourth columns 206, 208 are extended from the secondedge of the semiconductor units to the first edge, and the secondextensions 2421 are extended from the first edge to the second edge. Inthis embodiment, the second extensions 2421 are disposed substantiallyaround the edges of the semiconductor units and the first extensions areinterposed between thereof. A secondary extension 2411 c extended fromthe first curve extension 2411 a can be formed to increase the currentspreading.

The first pad 2412 and the second pad 2422 are formed on thesemiconductor units 255 and 291 respectively. The first pad 2412 is incontact with the first extension 2411 on the semiconductor units 255.The second pad 2422 is in contact with the second extension 2421 on thesemiconductor units 291. The pads are formed for bonding and arranged onthe different semiconductor units on the corner regions of the substrate21 respectively.

In the embodiment, connecting parts 243 form a serial connection betweenthe semiconductor units in the first, third, and fifth columns 205, 207,209 in a first orientation, and a reverse serial connection between thesemiconductor units in the second, and fourth columns 206, 209 in asecond orientation. The columns connect in series between thesemiconductor units 251 and 261, 264 and 275, 271 and 281, and 284 and295 by connecting parts 243. There are two connecting parts 243 betweeneach two semiconductor units in the first, third, and fifth columns 205,207, 209, and one connecting part 243 between each two semiconductorunits in the second column 206 and fourth column 208. FIG. 7 is anequivalent circuit diagram of the optoelectronic device 20 shown in FIG.5.

FIG. 8 illustrates a top view of an optoelectronic device 30 inaccordance with the third embodiment of the present application.Referring to FIGS. 8-9, the optoelectronic device 30 includes aplurality of semiconductor units formed on a substrate 31, firstelectrodes 341, second electrodes 342, and connecting parts 343 formedon the semiconductor units. The structure of the semiconductor unitsincludes the first semiconductor layer 121, the second semiconductorlayer 123, and the active region 122 interposed between thereof. Aplurality of separation grooves 311 are formed between the semiconductorunits. A plurality of first electrodes 341 and second electrodes 342 areformed on the optoelectronic device 30. The first electrodes 341 with afirst extension 3411 are formed on the semiconductor units other thanthe semiconductor unit 355, and the second electrodes 342 formed on eachsemiconductor units include a second extension 3421. The first electrode341 formed on one of the semiconductor units includes a first pad 3412,and the second electrode 342 formed on another one of the semiconductorunits includes a second pad 3422.

In the embodiment, the size of the optoelectronic device 30 is 50×50mil², and the driving voltage is 72 V. The driving voltage of eachsemiconductor unit is about 3 V. The area of each semiconductor unit isthe same with each other. The optoelectronic device 30 includestwenty-three semiconductor units arranged in five columns 305, 306, 307,308, and 309. The first column 305 includes five semiconductor units351, 352, 353, 354, and 355 connected in series in a first orientation.The second column 306 includes four semiconductor 361, 362, 363, and 364units connected in series in a second orientation. The third column 307includes five semiconductor units 371, 372, 373, 374, and 375 connectedin series in a first orientation. The fourth column 308 includes foursemiconductor units 381, 382, 383, and 384 connected in series in asecond orientation. The fifth column 309 includes five semiconductorunits 391, 392, 393, 394, and 395 connected in series in a firstorientation.

The shape of the semiconductor units in the second and fourth columns306 and 308 is different from that of the semiconductor units in theother columns. Referring to FIG. 8 and FIG. 9, the layouts of theelectrode on semiconductor units in first column 305, third column 307,and fifth column 309 are similar to each other except that of theelectrode on the semiconductor units 351, 355, 371, 375, 391, and 395.The layouts of the electrode on the semiconductor units in second column306 and fourth column 308 are the same except that of the electrode onthe semiconductor units 361, 364, 381, and 384. The first extensions3411 can be curve extensions 3411 a disposed on the semiconductor units361, 375, 381, 391, and 394 close to the edge of the substrate 31, orstraight extensions 3411 b disposed on the other semiconductor units.All of the second extensions 3421 are curve extensions.

The first extensions 3411 of the semiconductor units in first, third,and fifth columns 305, 307, 309 other than the semiconductor units 375and 395 are extended from the first edge of the semiconductor units tothe second edge; the second extensions 3421 are extended from the firstedge to the second edge. The first extensions 3411 of the semiconductorunits 375 and 395 are extended from a third edge of the semiconductorunits 375 and 395 to the second edge. The first extensions 3411 of thesemiconductor units in second and fourth columns 306, 308 other than thesemiconductor units 361 and 381 are extended from the second edge to thefirst edge; the second extensions 3421 are extended from the first edgeto the second edge. The first extensions 3411 of the semiconductor units361 and 381 are extended from a third edge of the semiconductor units361 and 381 to the first edge. The curve extensions of the firstextensions 3411 and the second extension 3421 are not parallel to theedge of the semiconductor units. In this embodiment, the secondextensions 3421 are disposed substantially around the edges of thesemiconductor units and the first extensions are interposed betweenthereof. Secondary extensions 3411 c extended from the curve extension3411 a and the straight extension 3411 b can be optionally formed toincrease the current spreading.

The first pad 3412 and the second pad 3422 are formed on thesemiconductor units 355 and 391 respectively. The second pad 3422 is incontact with the second extension 3421 on the semiconductor units 391.The pads are formed for wire bonding or flip chip type bonding andarranged on the different semiconductor units on the corner regions ofthe substrate 31 respectively.

In the embodiment, connecting parts 343 form a serial connection betweenthe semiconductor units in the first, third, and fifth columns 305, 307,309 in the first orientation, and a reverse serial connection betweenthe semiconductor units in the second, and fourth columns 306, 309 inthe second orientation. The columns connect in series between thesemiconductor units 351 and 361, 364 and 375, 371 and 381, and 384 and395 by connecting parts 343. There is only one connecting part 343between each two semiconductor units. FIG. 10 is an equivalent circuitdiagram of the optoelectronic device 30 shown in FIG. 8.

FIG. 11 illustrates a top view of an optoelectronic device 40 inaccordance with the fourth embodiment of the present application.Referring to FIGS. 11-12, the optoelectronic device 40 includes aplurality of semiconductor units formed on a substrate 41, firstelectrodes 441, second electrodes 442, and connecting parts 443 formedon the semiconductor units. The structure of the semiconductor unitsincludes the first semiconductor layer 121, the second semiconductorlayer 123, and the active region 122 interposed between thereof. Aplurality of separation grooves 411 are formed between the semiconductorunits. A plurality of first electrodes 441 and second electrodes 442 areformed on the optoelectronic device 40. The first electrodes 441 with afirst extension 4411 are formed on the semiconductor units other thanthe semiconductor unit 455, and the second electrodes 442 with a secondextension 4421 are formed on the semiconductor units other than thesemiconductor unit 471. The first electrode 441 formed on one of thesemiconductor units includes a first pad 4412, and the second electrode442 formed on another one of the semiconductor units includes a secondpad 4422.

In the embodiment, the size of the optoelectronic device 40 is 45×45mil², and the driving voltage is 48 V. The driving voltage of eachsemiconductor unit is about 3 V. According to the equation of the numberof semiconductor unit, the optoelectronic device 40 includes sixteensemiconductor units arranged in three columns 405, 406, and 407. Thefirst column 405 includes five semiconductor units 451, 452, 453, 454,and 455 connected in series in a first orientation. The second column406 includes six semiconductor units 461, 462, 463, 464, 465, and 466connected in series in a second orientation. The third column 407includes five semiconductor units 471, 472, 473, 474, and 475 connectedin series in the first orientation.

The shape of the semiconductor units in the second column 402 isdifferent from that of the semiconductor units in the other columns.Referring to FIG. 11 and FIG. 12, the layouts of the electrode onsemiconductor units in first column 405, and third column 407 aresimilar to each other except that of the semiconductor units 451, 455,471, and 475. The first extension 4411 includes a straight extension4411 a and a secondary extension 4411 c. All of the second extensions4421 are curve extensions. The first extensions 4411 of thesemiconductor units in first and second columns 405, 407 are extendedfrom the first edge of the semiconductor units to the third and fourthedges adjacent to the first edge; and the second curve extensions 4421are extended from the second edge to the third and fourth edges. Thefirst extensions 4411 of the semiconductor units in second column 406 isextended from the second edge to the third and fourth edges; and thesecond extensions 4421 are extended from the first edge to the third andfourth edges. The curve extensions 4411 and 4421 are not parallel to anyedge of the semiconductor units.

The first pad 4412 and the second pad 4422 are formed on thesemiconductor units 455 and 471 respectively. Connecting parts 443 forma serial connection between the semiconductor units. FIG. 13 is anequivalent circuit diagram of the optoelectronic device 40 shown in FIG.11.

FIG. 14 illustrates a top view of an optoelectronic device 50 inaccordance with the fifth embodiment of the present application. FIG. 15illustrates a three-dimensional view of the optoelectronic device 50.The size of the optoelectronic device 50 is 40×40 mil², and the drivingvoltage is 36 V. The driving voltage of each semiconductor unit is about3 V. According to the equation

$( {\frac{V}{V_{f}} - 1} ),$

in this embodiment, the optoelectronic device 50 includes elevensemiconductor units arranged in three columns 505, 506, and 507. Thefirst column 505 includes four semiconductor units 551, 552, 553, and554 connected in series in a first orientation. The second column 506includes three semiconductor units 561, 562, and 563 connected in seriesin a second orientation. The third column 507 includes foursemiconductor units 571, 572, 573, and 574 connected in series in thefirst orientation. The first electrodes 541 with a first extension 5411are formed on the semiconductor units other than the semiconductor unit554, and the second electrodes 542 include a second extension 5421 areformed on all of the semiconductor units. The first electrode 541 formedon the semiconductor unit 554 includes a first pad 5412, and the secondelectrode 542 formed on the semiconductor unit 571 includes a second pad5422. Connecting parts 543 form a serial connection between thesemiconductor units. FIG. 16 is an equivalent circuit diagram of theoptoelectronic device 50 shown in FIG. 14.

FIG. 17 illustrates a top view of an optoelectronic device 60 inaccordance with the sixth embodiment of the present application. FIG. 18illustrates a three-dimensional view of the optoelectronic device 60.The size of the optoelectronic device 60 is 120×120 mil², and thedriving voltage is 24 V. The driving voltage of each semiconductor unitis about 3 V. According to the equation

$( \frac{V}{V_{f}} ),$

in this embodiment, the optoelectronic device 60 includes eightsemiconductor units arranged in three columns 605, 606, and 607. Thefirst column 605 includes two semiconductor units 651, and 652 connectedin series in a first orientation. The second column 606 includes foursemiconductor units 661, 662, 653, and 664 connected in series in asecond orientation. The third column 607 includes two semiconductorunits 671, and 672 connected in series in the first orientation. Thefirst electrodes 641 include a first extension 6411, and the secondelectrodes 642 include a second extension 6421. The first electrode 641formed on one of the semiconductor units includes two first pads 6412,and the second electrode 642 formed on another one of the semiconductorunits includes two second pads 6422. Connecting parts 643 form a serialconnection between the semiconductor units. FIG. 19 is an equivalentcircuit diagram of the optoelectronic device 60 shown in FIG. 17.

FIG. 20 illustrates a top view of an optoelectronic device 70 inaccordance with the sixth embodiment of the present application. FIG. 21illustrates a three-dimensional view of the optoelectronic device 70.The size of the optoelectronic device 70 is 120×120 mil², and thedriving voltage is 24 V. The driving voltage of each semiconductor unitis about 3 V. According to the equation

$( {\frac{V}{V_{f}} - 1} ),$

in this embodiment, the optoelectronic device 70 includes sevensemiconductor units arranged in three columns 705, 706, and 707. Thefirst column 705 includes two semiconductor units 751, and 752 connectedin series in a first orientation. The second column 706 includes threesemiconductor units 761, 762, and 753 connected in series in a secondorientation. The third column 707 includes two semiconductor units 771,and 772 connected in series in the first orientation. The firstelectrodes 741 include a first extension 7411, and the second electrodes742 include a second extension 7421. The first electrode 741 formed onone of the semiconductor units includes two first pads 7412, and thesecond electrode 742 formed on another one of the semiconductor unitsincludes two second pads 7422. Connecting parts 743 form a serialconnection between the semiconductor units. FIG. 22 is an equivalentcircuit diagram of the optoelectronic device 70 shown in FIG. 20.

FIG. 23 illustrates a top view of an optoelectronic device 80 inaccordance with the seventh embodiment of the present application. FIG.24 illustrates a three-dimensional view of the optoelectronic device 80.The size of the optoelectronic device 80 is 85×85 mil², and the drivingvoltage is 144 V. The driving voltage of each semiconductor unit isabout 3 V. According to the equation

$( \frac{V}{V_{f}} ),$

in this embodiment, the optoelectronic device 80 includes forty-eightsemiconductor units arranged in seven columns 801, 802, 803, 804, 805,806, and 807. Each of the columns 801, 803, 805, and 807 includes sevensemiconductor units connected in series in a first orientation. Each ofthe columns 802 and 806 includes seven semiconductor units connected inseries in a second orientation. The fourth column 804 includes sixsemiconductor units connected in series in the first orientation. Thefirst electrode 841 with a first extension 8411 are formed on thesemiconductor units other than the semiconductor unit where a first pad8412 is formed on, and the second electrode 842 includes a secondextension 8421 are formed on all of the semiconductor units. The secondelectrode 842 formed on one of the semiconductor units includes a secondpad 8422. Connecting parts 843 form a serial connection between thesemiconductor units.

The material of the first semiconductor layer, the active region and thesecond semiconductor layer contains one or more elements selected fromthe group consisting of Ga, Al, In, As, P, N and Si, such as GaN, AlGaN,InGaN, AlGaInN, GaP, GaAs, GaAsP, GaNAs, or Si. The material of thesubstrate includes sapphire, GaAs, GaP, SiC, ZnO, GaN, AlN, Cu or Si.

Those having ordinary skill in the art will readily observe thatnumerous modifications and alterations of the device and method may bemade while retaining the teachings of the invention. Accordingly, theabove disclosure should be construed as limited only by the metes andbounds of the appended claims.

What is claimed is:
 1. An optoelectronic device comprising: a substrate;a plurality of grooves on the substrate; a plurality of semiconductorunits on the substrate and separated from each other by the plurality ofgroove, each of the plurality of semiconductor units comprising a firstsemiconductor layer, a second semiconductor layer, and an active regioninterposed between the first semiconductor layer and the secondsemiconductor layer wherein the plurality of semiconductor unitscomprises a first plurality of semiconductor units arranged in a firstcolumn and a second plurality of semiconductor units arranged in asecond column, a number of the first plurality of semiconductor units isan even number; and a number of the second plurality of semiconductorunits is an odd number; and wherein the first plurality of semiconductorunits comprises a first semiconductor unit comprising a first edgehaving a first length extending along a first direction, the secondplurality of semiconductor units comprises a second semiconductor unitcomprising a second edge having a second length extending along thefirst direction, and the first length is longer than the second length;and a connecting part connecting the first semiconductor unit and thesecond semiconductor unit.
 2. The optoelectronic device according toclaim 1, wherein the plurality of grooves comprises a first groovebetween adjacent two of the first plurality of semiconductor units, asecond groove between adjacent two of the second plurality ofsemiconductor units, and a third groove between the first plurality ofsemiconductor units and the second plurality of semiconductor units. 3.The optoelectronic device according to claim 1, wherein the first grooveis connected to a first position of the third groove, the second grooveis connected to a second position of the third groove, and the firstposition is different from the second position.
 4. The optoelectronicdevice according to claim 1, further comprising a first electrode on thefirst semiconductor layer of each of the plurality of semiconductorunits, and a second electrode on the second semiconductor layer of eachof the plurality of semiconductor units, wherein a first electrodelayout of the first electrode and the second electrode of the firstgroup of semiconductor units is different from a second electrode layoutof the first electrode and the second electrode of the second group ofsemiconductor units.
 5. The optoelectronic device according to claim 1,wherein the plurality of semiconductor units are arranged to form arectangular shape.
 6. The optoelectronic device according to claim 5,wherein the first plurality of semiconductor units arranged in the firstcolumn are arranged to form a first rectangular shape, and the secondplurality of semiconductor units arranged in the second column arearranged to form a second rectangular shape.
 7. The optoelectronicdevice according to claim 6, wherein areas of the plurality ofsemiconductor units are substantially the same.
 8. The optoelectronicdevice according to claim 6, wherein an area size of the firstrectangular shape is different from that of the second rectangularshape.
 9. The optoelectronic device according to claim 6, wherein eachof the first plurality of semiconductor units comprises same area sizeand shape to each other, each of the second plurality of semiconductorunits comprises same area size and shape to each other, and a ratio oflength and width of the shape of one of the first plurality ofsemiconductor units is different from that of one of the secondplurality of semiconductor units.
 10. The optoelectronic deviceaccording to claim 1, wherein one of the first plurality ofsemiconductor units comprises an electrode layout different from that ofothers of the first plurality of semiconductor units, or one of thesecond plurality of semiconductor units comprises an electrode layoutdifferent from that of others of the second plurality of semiconductorunits.
 11. An optoelectronic device comprising: a substrate; a pluralityof grooves on the substrate; a plurality of semiconductor units on thesubstrate and separated from each other by the plurality of groove, eachof the plurality of semiconductor units comprising a first semiconductorlayer, a second semiconductor layer, and an active region interposedbetween the first semiconductor layer and the second semiconductor layerwherein the plurality of semiconductor units comprises a first pluralityof semiconductor units comprising arranged in a first column and asecond plurality of semiconductor units arranged in a second column, anumber of the first plurality of semiconductor units is an odd number;and a number of the second plurality of semiconductor units is an evennumber; and wherein the first plurality of semiconductor units comprisesa first semiconductor unit comprising a first edge having a first lengthextending along a first direction, the second plurality of semiconductorunits comprises a second semiconductor unit comprising a second edgehaving a second length extending along the first direction, and thefirst length is longer than the second length; and a connecting partconnecting the first semiconductor unit and the second semiconductorunit.
 12. The optoelectronic device according to claim 1, wherein theplurality of grooves comprises a first groove between adjacent two ofthe first plurality of semiconductor units, a second groove betweenadjacent two of the second plurality of semiconductor units, and a thirdgroove between the first plurality of semiconductor units and the secondplurality of semiconductor units.
 13. The optoelectronic deviceaccording to claim 1, wherein the first groove is connected to a firstposition of the third groove, the second groove is connected to a secondposition of the third groove, and the first position is different fromthe second position.
 14. The optoelectronic device according to claim 1,further comprising a first electrode on the first semiconductor layer ofeach of the plurality of semiconductor units, and a second electrode onthe second semiconductor layer of each of the plurality of semiconductorunits, wherein an electrode layout of the first electrode and the secondelectrode of the first group of semiconductor units is different from anelectrode layout of the first electrode and the second electrode of thesecond group of semiconductor units.
 15. The optoelectronic deviceaccording to claim 11, wherein the plurality of semiconductor units arearranged to form a rectangular shape.
 16. The optoelectronic deviceaccording to claim 15, wherein the first plurality of semiconductorunits arranged in the first column are arranged to form a firstrectangular shape, and the second plurality of semiconductor unitsarranged in the second column are arranged to form a second rectangularshape.
 17. The optoelectronic device according to claim 16, whereinareas of the plurality of semiconductor units are substantially thesame.
 18. The optoelectronic device according to claim 16, wherein anarea size of the first rectangular shape is different from that of thesecond rectangular shape.
 19. The optoelectronic device according toclaim 16, wherein each of the first plurality of semiconductor unitscomprises same area size and shape to each other, each of the secondplurality of semiconductor units comprises same area size and shape toeach other, and a ratio of length and width of the shape of one of thefirst plurality of semiconductor units is different from that of one ofthe second plurality of semiconductor units.
 20. The optoelectronicdevice according to claim 11, wherein one of the first plurality ofsemiconductor units comprises an electrode layout different from that ofothers of the first plurality of semiconductor units, or one of thesecond plurality of semiconductor units comprises an electrode layoutdifferent from that of others of the second plurality of semiconductorunits.